High power AlGaN/GaN HEMTs for microwave applications

Solid-State Electronics

Volumn 41, Issue 10, 1997, Pages 1569-1574

  Wu, Y F ^a   Keller, B P ^a   Keller, S ^a   Kapolnek, D ^a   Kozodoy, P ^a   Denbaars, S P ^a   Mishra, U K ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN OF SOLIDS; GATES (TRANSISTOR); HIGH TEMPERATURE APPLICATIONS; MICROWAVE DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SUBSTRATES; THERMAL CONDUCTIVITY OF SOLIDS;

DUAL HEAT SOURCE MODEL;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0031245474     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00106-8     Document Type: Article

References (12)

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