Thermal analysis of AlGaN-GaN power HFETs

IEEE Transactions on Microwave Theory and Techniques

Volumn 51, Issue 12, 2003, Pages 2445-2452

  Nuttinck, Sebastien ^a   Wagner, Brent K ^b   Banerjee, Bhaskar ^a   Venkataraman, Sunitha ^a   Gebara, Edward ^c,d   Laskar, Joy ^a   Harris, Herbert M Mike ^b  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b GEORGIA TECH RESEARCH INSTITUTE   (United States)

^c Quellan Inc   (United States)

^d GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

AlGaN GaN heterojunction field effect transistors (HFETs); High temperature; Microwave; Thermal effect; Thermal modeling

Indexed keywords

HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; HIGH TEMPERATURE EFFECTS; POWER ELECTRONICS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; TEMPERATURE MEASUREMENT; THERMOANALYSIS;

ALUMINUM GALLIUM NITRIDE; HETEROJUNCTION FIELD EFFECT TRANSISTORS; PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS; TEMPERATURE COEFFICIENT;

FIELD EFFECT TRANSISTORS;

EID: 0742321739     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2003.819192     Document Type: Article

References (15)

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