Self-assembly of InAs and Si/Ge quantum dots on structured surfaces

Journal of Physics Condensed Matter

Volumn 16, Issue 17, 2004, Pages

  Patella, F ^a   Sgarlata, A ^a   Arciprete, F ^a   Nufris, S ^a   Szkutnik, P D ^a   Placidi, E ^a   Fanfoni, M ^a   Motta, N ^b   Balzarotti, A ^a  

^a UNIVERSITY OF ROME TOR VERGATA   (Italy)

^b ROMA TRE UNIVERSITY   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; ELECTRON BEAM LITHOGRAPHY; EPITAXIAL GROWTH; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PHASE TRANSITIONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SELF ASSEMBLY; SEMICONDUCTING SILICON;

EPITAXIAL STRUCTURES; FOCUSED ION BEAM (FIB); QUANTUM NANOSTRUCTURES; STUCTURED SURFACES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 2442693251     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/16/17/005     Document Type: Review

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