Nanometer-scale Ge selective growth on Si(001) using ultrathin SiO2 film

Surface Science

Volumn 462, Issue 1, 2000, Pages

  Nitta, Yoshiki ^a   Shibata, Motoshi ^a   Fujita, Ken ^a   Ichikawa, Masakazu ^a  

^a JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; ELECTRON BEAMS; ELECTRON IRRADIATION; EPITAXIAL GROWTH; NANOSTRUCTURED MATERIALS; OXIDATION; PYROLYSIS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SILICA; ULTRATHIN FILMS;

SELECTIVE GROWTH;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0034245248     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(00)00547-1     Document Type: Article

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