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Surface Science

Volumn 515, Issue 2-3, 2002, Pages 483-490

A first principles study of sub-monolayer Ge on Si(0 0 1)

(3) Oviedo, J a Bowler, D R a Gillan, M J a

a UNIVERSITY COLLEGE LONDON (United Kingdom)

Author keywords

Density functional calculations; Germanium; Semiconductor semiconductor thin film structures; Silicon; Surface stress

Indexed keywords

DIMERS; EPITAXIAL GROWTH; MONOLAYERS; PROBABILITY DENSITY FUNCTION; SEMICONDUCTING GERMANIUM; THIN FILMS;

DENSITY FUNCTIONAL CALCULATIONS; SURFACE STRESSES;

SEMICONDUCTING SILICON;

EID: 0036720481 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(02)01964-7 Document Type: Article

Times cited : (23)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.