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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 7 B, 2000, Pages 4604-4608

Formation and shape of InAs nanoparticles on GaAs surfaces: Fundamental thermodynamics

a NTT Basic Research Laboratories ^* (United Kingdom)

b Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories (Japan)

Author keywords

Film growth; GaAs; Gibbs free energy; Helmholtz free energy; InAs; Liquid like coalescence; Melting; Strain; Stress; Thermodynamics

Indexed keywords

COALESCENCE; ELECTRON DIFFRACTION; ELECTRON MICROSCOPY; EPITAXIAL GROWTH; FILM GROWTH; GIBBS FREE ENERGY; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN;

INDIUM ARSENIDE;

SEMICONDUCTOR GROWTH;

EID: 0034226345 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.39.4604 Document Type: Article

Times cited : (16)

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