Effect of strain on surface diffusion in semiconductor heteroepitaxy

Physical Review B - Condensed Matter and Materials Physics

Volumn 64, Issue 8, 2001, Pages

  Penev, Evgeni ^a   Kratzer, Peter ^a   Scheffler, Matthias ^a  

^a FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC DERIVATIVE; CATION; GALLIUM; INDIUM;

ARTICLE; CALCULATION; CHEMICAL BINDING; COMPRESSION; DIFFUSION; ENERGY; GROWTH; SEMICONDUCTOR; SURFACE PROPERTY; TENSILE STRENGTH;

EID: 0035881134     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.64.085401     Document Type: Article

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