Surface alloying at InAs-GaAs interfaces grown on (001) surfaces by molecular beam epitaxy

Surface Science

Volumn 387, Issue 1-3, 1997, Pages 213-226

  Belk, J G ^a   McConville, C F ^a,b   Sudijono, J L ^a,c   Jones, T S ^a   Joyce, B A ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b UNIVERSITY OF WARWICK   (United Kingdom)

^c Chartered Semiconductor Manufacturing   (Singapore)

Author keywords

Gallium arsenide; Indium arsenide; Molecular beam epitaxy; Reflection high energy electron diffraction; Semiconductor films; Surface segregation; Surface structure, morphology, roughness, and topography

Indexed keywords

CRYSTAL ORIENTATION; MOLECULAR BEAM EPITAXY; MORPHOLOGY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SURFACE PHENOMENA; SURFACE ROUGHNESS; THERMAL EFFECTS; WETTING;

INDIUM ARSENIDE; SURFACE RECONSTRUCTION; SURFACE SEGREGATION; SURFACE TOPOGRAPHY;

HETEROJUNCTIONS;

EID: 0031559979     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(97)00355-5     Document Type: Article

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