Self-assembled island formation in heteroepitaxial growth

Applied Physics Letters

Volumn 70, Issue 19, 1997, Pages 2565-2567

  Barabási, Albert László ^a  

^a UNIVERSITY OF NOTRE DAME   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001396627     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118920     Document Type: Article

References (27)

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19. The fact that the model is one dimensional is not expected to affect the nature of the self-organization process, but it can modify such quantities as the island size and critical coverage.
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21. Note that compressive (tensile) strain lowers (increases) the energy barrier for diffusion [see M. Schroeder and D. E. Wolf (preprint)]. For SAQD formation the strain is compressive, thus we use a negative sign for the strain energy. This sign also determines the direction of the surface current near an island discussed under (a).
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23. d corresponds to growth with high flux.
24. For a recent review see, A.-L. Barabási and H. E. Stanley, Fractal Concepts in Surface Growth (Cambridge University Press, Cambridge, 1995).
25. Note that in Fig. 1(b) ρ increases much faster for ε=7.5% than for ε = 5%. While for ε=5% a wetting layer is formed [see I. Darulca and A.-L. Barabasi, Phys. Rev. Lett. 78, 3027 (1997)], for ε=7.5% all deposited atoms aggregate in islands. Thus we suspect that for ε=7.5% the strain energy is large enough to lead to the Volmer-Weber growth mode (3D island formation), in contrast with ε≤5%, that grows in the Stranski-Krastanov growth mode. The detailed account of this transition will be presented elsewhere.
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