Diffusional kinetics of SiGe dimers on Si(100) using atom-tracking scanning tunneling microscopy

Physical Review Letters

Volumn 85, Issue 17, 2000, Pages 3660-3663

  Qin, X R ^a,c   Swartzentruber, B S ^b   Lagally, M G ^a  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c UNIVERSITY OF GUELPH   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ANALYSIS; ATOMS; DEGASSING; DIFFUSION IN SOLIDS; DIMERS; HEATING; REACTION KINETICS; SCANNING TUNNELING MICROSCOPY; SUBSTRATES;

ATOM TRACKING SCANNING TUNNELING MICROSCOPY; ATOMIC INTERMIXING; RESISTIVE HEATING; SILICON GERMANIUM DIMERS; ULTRAHIGH VACUUM VARIABLE TEMPERATURE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0034295797     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.85.3660     Document Type: Article

References (14)

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