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Volumn 440, Issue 3, 1999, Pages 407-419

Impact of the growth on the stability-instability transition at Si (111) during step bunching induced by electromigration

(2) Metois J J a,b Stoyanov, S a,c

a CAMPUS DE LUMINY (France)

b AIX MARSEILLE UNIVERSITY (France)

c INSTITUTE OF PHYSICAL CHEMISTRY (Bulgaria)

Author keywords

Adatoms; Crystallisation; Faceting; Models of surface kinetics; Reflection electron microscopy; Silicon; Stepped single crystal surfaces; Surface diffusion; Surface structure, morphology

Indexed keywords

ADSORPTION; CHEMICAL BONDS; CRYSTAL GROWTH; CRYSTAL ORIENTATION; CRYSTALLIZATION; DIFFUSION; ELECTROMIGRATION; ELECTRON MICROSCOPY; MORPHOLOGY; SEMICONDUCTOR GROWTH; SURFACE STRUCTURE;

ADATOMS; REFLECTION ELECTRON MICROSCOPY (REM); STEP BUNCHING;

SEMICONDUCTING SILICON;

EID: 0033364165 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(99)00817-1 Document Type: Article

Times cited : (67)

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