Island formation and faceting in the SiGe/Si(0 0 1) system

Surface Science

Volumn 532-535, Issue , 2003, Pages 769-773

  Rastelli, Armando ^a   Von Känel, Hans ^b,c  

^a UNIVERSITY OF PAVIA   (Italy)

^b ETH ZURICH   (Switzerland)

^c POLITECNICO DI MILANO   (Italy)

Author keywords

Epitaxy; Germanium; Scanning tunneling microscopy; Silicon; Surface structure, morphology, roughness, and topography

Indexed keywords

ANNEALING; COMPOSITION; EPITAXIAL GROWTH; MAGNETRON SPUTTERING; MORPHOLOGY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SURFACE ROUGHNESS; SURFACE STRUCTURE;

ISLAND FORMATION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0037508516     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(03)00480-1     Document Type: Conference Paper

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