Mass transfer in Stranski-Krastanow growth of InAs on GaAs

Applied Physics Letters

Volumn 70, Issue 5, 1997, Pages 640-642

  Ramachandran, T R ^a   Heitz, R ^a   Chen, P ^a   Madhukar, A ^a  

^a UNIVERSITY OF SOUTHERN CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000207616     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118848     Document Type: Article

References (22)

1. S. Guha, A. Madhukar, and K. C. Rajkumar, Appl. Phys. Lett. 57, 2110 (1990); F. Houzay, C. Guille, J. M. Moison, P. Henoc, and F. Barthe, J. Cryst. Growth 81, 67 (1987).
2. S. Guha, A. Madhukar, and K. C. Rajkumar, Appl. Phys. Lett. 57, 2110 (1990); F. Houzay, C. Guille, J. M. Moison, P. Henoc, and F. Barthe, J. Cryst. Growth 81, 67 (1987).
3. D. J. Eaglesham and M. Cerullo, Phys. Rev. Lett. 64, 1943 (1990); Y.-W. Mo, D. E. Savage, B. S. Swartzentruber, and M. G. Lagally, ibid. 65, 1020 (1990).
4. D. J. Eaglesham and M. Cerullo, Phys. Rev. Lett. 64, 1943 (1990); Y.-W. Mo, D. E. Savage, B. S. Swartzentruber, and M. G. Lagally, ibid. 65, 1020 (1990).
5. For a review, see J. A. Venables, G. D. T. Spiller, and M. Hanbucken, Rep. Prog. Phys. 47, 399 (1984).
6. Q. Xie, A. Kalburge, P. Chen, and A. Madhukar, IEEE Photonics Technol. Lett. 8, 965 (1996).
7. N. N. Ledentsov, M. Grundmann, N. Kirstaedter, O. Schmidt, R. Heitz, J. Bohrer, D. Bimberg, V. M. Ustinov, V. A. Shchukin, A. Yu. Egorov, A. E. Zhukov, S. Zaitsev, P. S. Kop'ev. Zh. I. Alferov, S. S. Ruvimov, A. O. Kosogov, P. Werner, U. Gosele, and J. Heydenreich, Solid-State Electron. 40, 785 (1996).
8. S. V. Ghaisas and A. Madhukar, Proc. SPIE 944, 16 (1988); J. Vac. Sci. Technol. B 7, 264 (1989).
9. S. V. Ghaisas and A. Madhukar, Proc. SPIE 944, 16 (1988); J. Vac. Sci. Technol. B 7, 264 (1989).
10. S. Stoyanov, Surf. Sci. 199, 226 (1988). This work also examines the role of surface kinetics in 2D-3D morphology change. However, it requires the existence of misfit dislocations for the formation of 3D islands, unlike the experimental situation under examination here.
11. C. Priester and M. Lannoo, Phys. Rev. Lett. 75, 93 (1995).
12. C. Ratsch, P. Smilauer, D. D. Vvedensky, and A. Zangwill, J. Phys. (France) I 6, 575 (1996).
13. J. Knall and J. B. Pethica, Surf. Sci. 265, 156 (1992).
14. H. Sunamura, N. Usami, Y. Shiraki, and S. Fukatsu, Appl. Phys. Lett. 66, 3024 (1995); P. Schittenhelm, M. Gail, J. Brunner, J. F. Nutzel, and G. Abstreiter, ibid. 67, 1292 (1995).
15. H. Sunamura, N. Usami, Y. Shiraki, and S. Fukatsu, Appl. Phys. Lett. 66, 3024 (1995); P. Schittenhelm, M. Gail, J. Brunner, J. F. Nutzel, and G. Abstreiter, ibid. 67, 1292 (1995).
16. C. W. Snyder, B. G. Orr, D. Kessler, and L. M. Sander, Phys. Rev. Lett. 66, 3032 (1991).
17. D. Leonard, K. Pond, and P. M. Petroff, Phys. Rev. B 50, 11687 (1994).
18. J. M. Moison, F. Houzay, F. Barthe, L. Leprince, E. Andre, and O. Vatel, Appl. Phys. Lett. 64, 196 (1994); J. M. Gerard, J. B. Genin, J. Lefebvre, J. M. Moison, N. Lebouche, and F. Barthe, J. Cryst. Growth 150, 351 (1995).
19. J. M. Moison, F. Houzay, F. Barthe, L. Leprince, E. Andre, and O. Vatel, Appl. Phys. Lett. 64, 196 (1994); J. M. Gerard, J. B. Genin, J. Lefebvre, J. M. Moison, N. Lebouche, and F. Barthe, J. Cryst. Growth 150, 351 (1995).
20. A. Polimeni, A. Patane, M. Capizzi, F. Martelli, L. Nasi, and G. Salviati, Phys. Rev. B 53, R4213 (1996).
21. N. P. Kobayashi, T. R. Ramachandran, P. Chen, and A. Madhukar, Appl. Phys. Lett. 68, 3299 (1996).
22. J. M. Moison, F. Houzay, F. Barthe, J. M. Gerard, B. Jusserand, J. Massies, and F. S. Turco-Sandroff, J. Cryst. Growth 111, 141 (1991).