Morphological instabilities of the InAs/GaAs(001) interface and their effect on the self-assembling of InAs quantum-dot arrays

Applied Physics Letters

Volumn 81, Issue 12, 2002, Pages 2270-2272

  Patella, F ^a   Arciprete, F ^a   Placidi, E ^a   Nufris, S ^a   Fanfoni, M ^a   Sgarlata, A ^a   Schiumarini, D ^a   Balzarotti, A ^a  

^a UNIVERSITY OF ROME TOR VERGATA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CATION DIFFUSION; ELASTIC STRAIN FIELDS; INAS; INAS QUANTUM DOTS; INAS/GAAS; LATERAL ORDERING; MORPHOLOGICAL INSTABILITY; QD ARRAYS; QUANTUM DOT ARRAYS; SELF AGGREGATION; SELF-ASSEMBLING; SELF-ASSEMBLING PROCESS; SUBSTRATE TEXTURE;

AGGLOMERATION; ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; INDIUM ARSENIDE; MORPHOLOGY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 79956051246     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1508416     Document Type: Article

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