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Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 1100-1105

Uniform and ordered self-assembled Ge dots on patterned Si substrates with selectively epitaxial growth technique

(5) Jin, G a Wan, J a Luo, Y H a Liu, J L a Wang, K L a

a UNIVERSITY OF CALIFORNIA (United States)

Author keywords

A1. Nanostructures; A3. Selective epitaxy; B1. Nanomaterials

Indexed keywords

EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; SELF ASSEMBLY; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR GROWTH; SILICON; SUBSTRATES;

SELECTIVE EPITAXY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0035399343 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)00996-4 Document Type: Conference Paper

Times cited : (15)

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