In situ, atomic force microscope studies of the evolution of InAs three-dimensional islands on GaAs(001)

Applied Physics Letters

Volumn 68, Issue 23, 1996, Pages 3299-3301

  Kobayashi, N P ^a   Ramachandran, T R ^a   Chen, P ^a   Madhukar, A ^a  

^a UNIVERSITY OF SOUTHERN CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001317758     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116580     Document Type: Article

References (15)

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15. 2. These values should thus be read as the amount of InAs delivered and not the surface coverage on GaAs(001).