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Volumn 369, Issue 1, 2000, Pages 126-129
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Formation of relaxed SiGe films on Si by selective epitaxial growth
a
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Author keywords
[No Author keywords available]
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
EPITAXIAL GROWTH;
FILM GROWTH;
INTERDIFFUSION (SOLIDS);
PHOTOLUMINESCENCE;
RELAXATION PROCESSES;
SEMICONDUCTING SILICON;
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTOR GROWTH;
STRAIN;
SUBSTRATES;
THIN FILMS;
FLAT-CAVED TRANSITIONS;
NEIGHBORING CONFINEMENT STRUCTURE (NCS);
SELECTIVE EPITAXIAL GROWTH (SEG);
SEMICONDUCTING FILMS;
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EID: 0034226882
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/S0040-6090(00)00850-6 Document Type: Article |
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Times cited : (16)
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References (7)
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