Dielectric Function of Nitride Semiconductors: Recent Experimental Results

Acta Physica Polonica A

Volumn 104, Issue 2, 2003, Pages 123-147

  Goldhahn, R ^a  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC PROPERTIES OF SOLIDS; ELECTRIC FIELDS; ELLIPSOMETRY; ENERGY GAP; LIGHT REFLECTION; MOLECULAR BEAM EPITAXY; NITRIDES; SPECTROSCOPY; SURFACE ROUGHNESS;

ELECTRON-HOLE INTERACTION;

SEMICONDUCTOR MATERIALS;

EID: 0242368095     PISSN: 05874246     EISSN: None     Source Type: Journal    
DOI: 10.12693/APhysPolA.104.123     Document Type: Conference Paper

References (75)

1. S. Nakamura, G. Fasol, The Blue Laser Diode, 1st ed., Springer-Verlag, Berlin 1988, p. 1.
2. N. Biyikli, I. Kimukin, T. Kartaloglu, O. Aytur, E. Ozbay, Appl. Phys. Lett. 82, 2344 (2003).
3. L.F. Eastman, V. Tilak, V. Kaper, J. Smart, R. Thompson, B.M. Green, J.R. Shealy, T. Prunty, Phys. Status Solidi A 194, 433 (2002).
4. D.J. As, A. Richter, J. Busch, M. Lubbers, J. Mimkes, K. Lischka, Appl. Phys. Lett. 78, 13 (2000).
5. Z.-F. Li, W. Lu, H.-J. Ye, Z.-H. Chen, X.-Z. Yuan, H.-F. Dou, S.-C. Shen, G. Li, S. J. Chua, J. Appl. Phys. 86, 2691 (1999).
6. A. Kasic, M. Schubert, S. Einfeldt, D. Hommel, T.E. Tiwald, Phys. Rev. B 62, 7365 (2000).
7. W.R.L. Lambrecht, B. Segall, J. Rife, W.R. Hunter, D.K. Wickenden, Phys. Rev. B 51, 13516 (1995).
8. B. Gil, in: Gallium Nitride (GaN) II, in series Semiconductors and Semimetals, Eds. J.I. Pankove, T.D. Moustakas, Vol. 57, Academic Press, San Diego 1999, p. 209.
9. L.X. Benedict, T. Wethkamp, K. Wilmers, C. Cobet, N. Esser, E.L. Shirley, W. Richter, M. Cardona, Solid State Commun. 112, 129 (1999).
10. T.L. Tansley, C.P. Foley, J. Appl. Phys. 59, 3241 (1986).
11. T. Inushima, V.V. Mamutin, V.A. Vekshin, S.V. Ivanov, T. Sakon, M. Motokawa, S. Ohoya, J. Cryst. Growth 227-228, 481 (2001).
12. R. Goldhahn, S. Shokhovets, V. Cimalla, L. Spiess, G. Ecke, O. Ambacher, J. Furthmüller, F. Bechstedt, H. Lu, W.J. Schaff, Mat. Res. Soc. Symp. Proc. 743, L.5.9 (2003).
13. M.J. Bergmann, H.C. Casey, Jr., J. Appl. Phys. 84, 1196 (1998).
14. H.M. Ng, D. Doppaludpudi, E. Iliopoulos, T.D. Moustakas, Appl. Phys. Lett. 74, 1036 (1999).
15. S. Shokhovets, R. Goldhahn, G. Gobsch, T.S. Cheng, C.T. Foxon, G.D. Kipshidze, Wo. Richter, J. Appl. Phys. 86, 2602 (1999).
16. T. Schmidtling, M. Drago, U.W. Pohl, W. Richter, J. Cryst. Growth 248, 523 (2003).
17. R. Goldhahn, S. Shokhovets; in: III-Nitride Semiconductors: Optical Properties II, in series Optoelectronic Properties of Semiconductors and Superlattices, Eds. M.O. Manasreh, H.X. Jiang, Vol. 14, Taylor & Francis Books, New York 2002, p. 73.
18. A.R.A. Zauner, M.A.C. Devillers, P.R. Hageman, P.K. Larsen, S. Porowski, MRS Internet J. Nitride Semicond. Res. 3, 17 (1998).
19. U. Köhler, D.J. As, B. Schöttker, T. Frey, K. Lischka, J. Scheiner, S. Shokhovets, R. Goldhahn, J. Appl. Phys. 85, 404 (1999).
20. Y. Hiroyama, M. Tamura, Jpn. J. Appl. Phys. Phys. 2, Lett. 37, L630 (1998).
21. S. Ruvimov, Z. Lilienthal-Weber, J. Washburn, T.J. Drummond, M. Haifich, S.R. Lee, Appl. Phys. Lett. 71, 2931 (1997).
22. S. Shokhovets, R. Goldhahn, V. Cimalla, T.S. Cheng, C.T. Foxon, J. Appl. Phys. 84, 1561 (1998).
23. J.F. Nye, Physical Properties of Crystals, 1st ed., Oxford University Press, Oxford 1985, p. 235.
24. N.E. Christensen, I. Gorczyca, Phys. Rev. B 50, 4397 (1994).
25. W.R.L. Lambrecht, S.N. Rashkeev, Phys. Status Solidi B 217, 599 (2000).
26. L. X. Benedict, E.L. Shirley, Phys. Rev. B 50, 5441 (1999).
27. F. Bechstedt, J. Furthmüller, M. Ferhat, L.K. Teles, L.M.R. Scolfaro, J.R. Leite, V.Yu. Davydov, O. Ambacher, R. Goldhahn, Phys. Status Solidi A 195, 628 (2003).
28. K. Kornitzer, T. Ebner, K. Thonke, R. Sauer, C. Kirchner, V. Schwegler, M. Kamp, M. Leszczynski, I. Grzegory, S. Porowski, Phys. Rev. B 60, 1471 (1999).
29. R.M.A. Azzam, N.M. Bashara, Ellipsometry and Polarized Light, 1st ed., Elsevier Science Publishers B.V. North Holland, Amsterdam 1989.
30. M. Schubert, Phys. Rev. B 53, 4265 (1996); M. Schubert, B. Rheinländer, J.A. Woollam, B. Johs, C.M. Herzinger, J. Opt. Soc. Am. A 13, 875 (1996).
31. M. Schubert, Phys. Rev. B 53, 4265 (1996); M. Schubert, B. Rheinländer, J.A. Woollam, B. Johs, C.M. Herzinger, J. Opt. Soc. Am. A 13, 875 (1996).
32. R. Dingle, D.D. Sell, S.E. Stokowski, M. Ilegems, Phys. Rev. B 4, 1211 (1971).
33. G. Yu, H. Ishikawa, T. Egawa, T. Soga, J. Watanabe, T. Jimbo, M. Umeno, Jpn. J. Appl. Phys. Phys. 2, Lett. 36, L1029 (1997).
34. D.E. Aspnes, J. Opt. Soc. Am. 70, 1275 (1980).
35. C. Cobet, N. Esset, J.T. Zettler, W. Richter, P. Waltereit, O. Brandt, K.H. Ploog, S. Peters, N.V. Edwards, O.P.A. Lindquist, M. Cardona, Phys. Rev. B 64, 165203 (2001).
36. N.V. Edwards, M.D. Bremser, T.W. Weeks, Jr., R.S. Kern, R.F. Davis, D.E. Aspnes, Appl. Phys. Lett. 69, 2065 (1996).
37. T. Wethkamp, Optical Properties of Group-III-Nitrides in the Visible to Vacuum-Ultraviolet Spectral Range Investigated by Spectroscopic Ellipsometry, 1st ed., Mensch & Buch Verlag, Berlin 1999.
38. S.W. King, J.P. Barnak, M.D. Bremser, K.M. Tracy, C. Ronning, R.F. Davis, R.J. Nemanich, J. Appl. Phys. 84, 5248 (1998).
39. R. Goldhahn, S. Shokhovets, J. Scheiner, G. Gobsch, T.S. Cheng, C.T. Foxon, U. Kaiser, G.D. Kipshidze, W. Richter, Phys. Status Solidi A 177, 107 (2000).
40. T. Kawashima, H. Yoshikawa, S. Adachi, S. Fuke, K. Ohtsuka, J. Appl. Phys. 82, 3528 (1997).
41. D.V. Sivukhin, Zh. Eksp. Tear. Fiz. 30, 374 (1956) [Sov. Phys. JETP 3, 269 (1956)].
42. D.V. Sivukhin, Zh. Eksp. Tear. Fiz. 30, 374 (1956) [Sov. Phys. JETP 3, 269 (1956)].
43. D.E. Aspnes, J.B. Theeten, F. Hottier, Phys. Rev. B 20, 3292 (1979).
44. D.E. Aspnes, Thin Solid Films 89, 249 (1982).
45. J.C. Maxwell-Garnett, Philos. Trans. R. Soc. Lond. 203, 385 (1904); ibid. A 205, 237 (1906).
46. J.C. Maxwell-Garnett, Philos. Trans. R. Soc. Lond. 203, 385 (1904); ibid. A 205, 237 (1906).
47. D.A.G. Bruggeman, Ann. Physik (Leipzig) 24, 636 (1935).
48. H.E. Bennett, J.O. Porteus, J. Opt. Soc. Am. 51, 123 (1961); J.O. Porteus, J. Opt. Soc. Am. 53, 1394 (1963); H.E. Bennett, Opt. Eng. 17, 480 (1978).
49. H.E. Bennett, J.O. Porteus, J. Opt. Soc. Am. 51, 123 (1961); J.O. Porteus, J. Opt. Soc. Am. 53, 1394 (1963); H.E. Bennett, Opt. Eng. 17, 480 (1978).
50. H.E. Bennett, J.O. Porteus, J. Opt. Soc. Am. 51, 123 (1961); J.O. Porteus, J. Opt. Soc. Am. 53, 1394 (1963); H.E. Bennett, Opt. Eng. 17, 480 (1978).
51. I. Ohlidal, K. Navratil, F. Lukes, J. Opt. Soc. Am. 61, 1630 (1971); I. Ohlidal, K. Navratil, F. Lukes, Surf. Sci. 45, 91 (1974).
52. I. Ohlidal, K. Navratil, F. Lukes, J. Opt. Soc. Am. 61, 1630 (1971); I. Ohlidal, K. Navratil, F. Lukes, Surf. Sci. 45, 91 (1974).
53. L.T. Romano, in: Gallium Nitride and Related Semiconductors, EMIS Datareviews Series, Eds. by J.H. Edgar, S. Strite, I. Akasaki, H. Amano, C. Wetzel, Vol. 23, INSPEC, London 1999, p. 239.
54. N. Wieser, M. Klose, F. Scholz, J. Off, Y. Dutrieux, Mat. Sci. Forum 264-268, 1355 (1998).
55. S. Shokhovets, R. Goldhahn, T.S. Cheng, C.T. Foxon, Semicond. Sci. Technol. 14, 181 (1999).
56. H. Amano, N. Watanabe, N. Koide, I. Akasaki, Jpn. J. Appl. Phys. Phys. 2, Let. 32, L1000 (1993).
57. M.J. Bergmann, Ü. Özgür, H.C. Casey, Jr., H.O. Everitt, J.F. Muth, Appl. Phys. Lett. 75, 67 (1999).
58. S. Shokhovets, R. Goldhahn, G. Gobsch, S. Piekh, R. Lantier, A. Rizzi, V. Lebedev, W. Richter, J. Appl. Phys. 94, 307 (2003).
59. J. Pastrňák, L. Roskovcov, Phys. Status Solidi 14, K5 (1966); L. Roskovcová, J. Pastrňák, R. Babuškova, Phys. Status Solidi 20, K29 (1967).
60. J. Pastrňák, L. Roskovcov, Phys. Status Solidi 14, K5 (1966); L. Roskovcová, J. Pastrňák, R. Babuškova, Phys. Status Solidi 20, K29 (1967).
61. B.T. Sullivan, R.R. Parsons, K.L. Westra, M.J. Brett, J. Appl. Phys. 64, 4144 (1988).
62. V. Yu. Davydov, A.A. Klochikhin, R.P. Seisyan, V.V. Emtsev, S.V. Ivanov, F. Bechstedt, J. Furthmüller, H. Harima, A.V. Mudryi, J. Aderhold, O. Semchinova, J. Graul, Phys. Status Solidi B 229, R1 (2002).
63. J. Wu, W. Walukiewicz, K.M. Yu, J.W. Ager III, E.E. Haller, H. Lu, W.J. Schaff, Y. Saito, Y. Nanishi, Appl. Phys. Lett. 80, 3967 (2002).
64. T. Matsuoka, H. Okamoto, M. Nakao, H. Harima, E. Kurimoto, Appl. Phys. Lett. 81, 1246 (2002).
65. R.T. Shamrell, C. Parman, Opt. Mater. 13, 289 (1999).
66. F. Li, D. Mo, C.B. Cao, Y.L. Zhang, H.L. Chan, C.L. Choy, J. Mat. Sci., Mat. Elsctr. 12, 725 (2001).
67. Q. Guo, O. Kato, M. Fujisawa, A. Yoshida, Solid State Commun. 83, 721 (1992); Q. Guo, H. Ogawa, A. Yoshida, J. Electron Spectrosc. Relat. Phenom. 79, 9 (1996).
68. Q. Guo, O. Kato, M. Fujisawa, A. Yoshida, Solid State Commun. 83, 721 (1992); Q. Guo, H. Ogawa, A. Yoshida, J. Electron Spectrosc. Relat. Phenom. 79, 9 (1996).
69. H. Lu, W.J. Schaff, J. Hwang, H. Wu, G. Koley, L.F. Eastman, Appl. Phys. Lett. 70, 1489 (2001).
70. S. Yamaguchi, M. Kariya, S. Nitta, T. Takeuchi, C. Wetzel, H. Amano, I. Akasaki, J. Appl. Phys. 85, 7682 (1999).
71. C. Persson, R. Ahuja, A. Ferreira da Silva, B. Johansson, J. Phys., Condens. Matter 13, 8945 (2001).
72. J.D. Dow, D. Redfield, Phys. Rev. B 1, 3358 (1970).
73. D.F. Blossey, Phys. Rev. B 2, 3976 (1970); D.F. Blossey, Phys. Rev. B 3, 1382 (1971).
74. D.F. Blossey, Phys. Rev. B 2, 3976 (1970); D.F. Blossey, Phys. Rev. B 3, 1382 (1971).
75. S. Shokhovets, D. Fuhrmann, R. Goldhahn, G. Gobsch, O. Ambacher, M. Hermann, U. Karrer, M. Eickhoff, Appl. Phys. Lett. 82, 1712 (2003).