Carrier concentration and mobility in GaN epilayers on sapphire substrate studied by infrared reflection spectroscopy

Journal of Applied Physics

Volumn 86, Issue 5, 1999, Pages 2691-2695

  Li, Z F ^a   Lu, W ^a   Ye, H J ^a   Chen, Z H ^a   Yuan, X Z ^a   Dou, H F ^a   Shen, S C ^a   Li, G ^b   Chua, S J ^b  

^a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; DAMPING; ELECTRON SCATTERING; INFRARED SPECTROSCOPY; LATTICE VIBRATIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTONS; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES; THIN FILMS;

INFRARED REFLECTION SPECTROSCOPY; MULTI-OSCILLATOR MODELS;

SEMICONDUCTING FILMS;

EID: 0032621666     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.371112     Document Type: Article

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