Determination of group III nitride film properties by reflectance and spectroscopic ellipsometry studies

Physica Status Solidi (A) Applied Research

Volumn 177, Issue 1, 2000, Pages 107-115

  Goldhahn, R ^a   Shokhovets, S ^a,d   Scheiner, J ^a   Gobsch, G ^a   Cheng, T S ^b   Foxon, C T ^b   Kaiser, U ^c   Kipshidze, G D ^c,e   Richter, W ^c  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^b UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^c FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

^d BELARUSIAN NATIONAL TECHNICAL UNIVERSITY   (Belarus)

^e IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; ELLIPSOMETRY; ENERGY GAP; FILM GROWTH; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; NITRIDES; REFRACTIVE INDEX; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SURFACE ROUGHNESS;

GALLIUM NITRIDE; SPECTROSCOPIC ELLIPSOMETRY;

SEMICONDUCTING FILMS;

EID: 0033903590     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(200001)177:1<107::AID-PSSA107>3.0.CO;2-8     Document Type: Article

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