Optical study of the α-GaN/GaAs interface properties as a function of MBE growth conditions

Semiconductor Science and Technology

Volumn 14, Issue 2, 1999, Pages 181-186

  Shokhovets, S ^a   Goldhahn, R ^a   Cheng, T S ^b   Foxon, C T ^b  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^b UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; FILM GROWTH; MOLECULAR BEAM EPITAXY; NITROGEN; REFRACTIVE INDEX; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SUBSTRATES; THERMAL EFFECTS;

GALLIUM FLUX; GALLIUM NITRIDE;

HETEROJUNCTIONS;

EID: 0033076448     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/14/2/013     Document Type: Article

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