Dielectric function of wurtzite GaN and AlN thin films

Solid State Communications

Volumn 112, Issue 3, 1999, Pages 129-133

  Benedict, L X ^a   Wethkamp, T ^b,c   Wilmers, K ^b,c   Cobet, C ^b   Esser, N ^b   Shirley, E L ^d   Richter, W ^b   Cardona, M ^c  

^a Lawrence Livermore   (United States)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^c MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^d NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CHARGE CARRIERS; ELECTRONIC STRUCTURE; OPTICAL PROPERTIES; PERMITTIVITY; POLARIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SYNCHROTRON RADIATION; THIN FILMS;

DIELECTRIC FUNCTION; WURTZITE;

SEMICONDUCTING FILMS;

EID: 0032684690     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(99)00323-3     Document Type: Article

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