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Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 1355-1358

Characterization of GaN epilayers grown on sapphire and SiC substrates

(5) Wieser, N a Klose, M a Scholz, F a Off, J a Dutrieux, Y a

a UNIVERSITY OF STUTTGART (Germany)

Author keywords

Carrier Concentration; Raman Scattering; Strain

Indexed keywords

CARRIER CONCENTRATION; FILM GROWTH; LIGHT TRANSMISSION; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL VARIABLES MEASUREMENT; RAMAN SCATTERING; SAPPHIRE; SEMICONDUCTING FILMS; SILICON CARBIDE; SUBSTRATES; TENSILE PROPERTIES; X RAY DIFFRACTION ANALYSIS;

GALLIUM NITRIDE HETEROEPITAXIAL FILMS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031675117 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.264-268.1355 Document Type: Article

Times cited : (4)

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