Optical constants of cubic GaN in the energy range of 1.5-3.7 eV

Journal of Applied Physics

Volumn 85, Issue 1, 1999, Pages 404-407

  Kohler U ^a   As, D J ^a   Schottker B ^a   Frey, T ^a   Lischka, K ^a   Scheiner, J ^b   Shokhovets, S ^b   Goldhahn, R ^b  

^a UNIVERSITY OF PADERBORN   (Germany)

^b ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELLIPSOMETRY; ENERGY GAP; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; PHOTONS; REFLECTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES; SURFACE ROUGHNESS; THIN FILMS;

EXTINCTION COEFFICIENT; GALLIUM NITRIDE; REFLECTIVITY AND SPECTROSCOPIC ELLIPSOMETRY;

REFRACTIVE INDEX;

EID: 0032620765     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.369398     Document Type: Review

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