Optical properties of hexagonal GaN

Journal of Applied Physics

Volumn 82, Issue 7, 1997, Pages 3528-3535

  Kawashima, Takahiro ^a   Yoshikawa, Hisashi ^a   Adachi, Sadao ^a   Fuke, Shunro ^b   Ohtsuka, Kohji ^c  

^a GUNMA UNIVERSITY   (Japan)

^b SHIZUOKA UNIVERSITY   (Japan)

^c Sanken Electronic Co   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000969646     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365671     Document Type: Article

References (36)

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28. 3D value for α-GaN is about 20 meV [G. D. Chen et al., Appl. Phys. Lett. 68, 2784 (1996); W. Shan et al., Phys. Rev. B 54, 16369 (1996)]. This value is considerably larger than those for GaAs and InP (∼4-5 meV) [S. Adachi, Physical Properties of III-V Semiconductor Compounds: InP, InAs, GaAs, GaP, InGaAs, and InGaAsP (Wiley-Interscience, New York, 1992)].
29. 3D value for α-GaN is about 20 meV [G. D. Chen et al., Appl. Phys. Lett. 68, 2784 (1996); W. Shan et al., Phys. Rev. B 54, 16369 (1996)]. This value is considerably larger than those for GaAs and InP (∼4-5 meV) [S. Adachi, Physical Properties of III-V Semiconductor Compounds: InP, InAs, GaAs, GaP, InGaAs, and InGaAsP (Wiley-Interscience, New York, 1992)].
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