Progress in high-power, high frequency AlGaN/GaN HEMTs

Physica Status Solidi (A) Applied Research

Volumn 194, Issue 2 SPEC., 2002, Pages 433-438

  Eastman, L F ^a   Tilak, V ^a   Kaper, V ^a   Smart, J ^a   Thompson, R ^a   Green, B ^a   Shealy, J R ^a   Prunty, T ^a  

^a Department of Obstetrics Gynecology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTAL STRUCTURE; ELECTRIC BREAKDOWN OF SOLIDS; GALLIUM NITRIDE; PASSIVATION; POLARIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; TEMPERATURE MEASUREMENT;

ALUMINUM GALLIUM NITRIDE; DRAIN VOLTAGE BREAKDOWN; SINGLE CHANNEL DEVICES; SURFACE STATE CHARGE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0036964468     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200212)194:2<433::AID-PSSA433>3.0.CO;2-R     Document Type: Article

References (5)

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2. O. Ambacher, J. Majeweski, C. Miskys, A. Link, M. Hermann, M. Eickhoff, M. Stutzmann, F. Bernardini, V. Fiorentini, V. Tilak, B. Schaff, and L. F. Eastman, J. Phys., Condens Matter 14, 3399 (2002).
3. J. A. Smart, A. T. Schremer, N. G. Weimann, O. Ambacher, L. F. Eastman, and J. R. Shealy, Appl. Phys. Lett. 75(1), 388 (1999).
4. B. Green, K. Chu, E. Chumbes, J. Smart, J. R. Shealy, and L. F. Eastman, IEEE Electron Device Lett. 21(6), 268 (2000).
5. J. R. Shealy, V. Kaper, V. Tilak, T. Prunty, J. A. Smart, B. Green, and L. F. Eastman, J. Phys., Condens. Matter 14, 3499 (2002).