Exciton quenching in Pt/GaN Schottky diodes with Ga- and N-face polarity

Applied Physics Letters

Volumn 82, Issue 11, 2003, Pages 1712-1714

  Shokhovets, S ^a   Fuhrmann, D ^a   Goldhahn, R ^a   Gobsch, G ^a   Ambacher, O ^a   Hermann, M ^b   Karrer, U ^b   Eickhoff, M ^b  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^b WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL IMPURITIES; DIELECTRIC DEVICES; EXCITONS; IONIZATION; LIGHT REFLECTION; SEMICONDUCTING GALLIUM ARSENIDE;

ELECTROREFLECTANCE SPECTRA;

SCHOTTKY BARRIER DIODES;

EID: 0037451488     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1561160     Document Type: Article

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