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Volumn 37, Issue 6 A, 1998, Pages
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Effect of very thin SiC layer on heteroepitaxial growth of cubic GaN on Si (001)
a
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Author keywords
[No Author keywords available]
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Indexed keywords
EFFECTS;
EPITAXIAL GROWTH;
MOLECULAR BEAM EPITAXY;
NITRIDES;
PLASMA APPLICATIONS;
SEMICONDUCTING SILICON;
SILICON CARBIDE;
SURFACES;
SYNTHESIS (CHEMICAL);
TRANSMISSION ELECTRON MICROSCOPY;
CUBIC GALLIUM NITRIDE;
HETEROEPITAXY;
PLASMA ASSISTED MOLECULAR BEAM EPITAXY;
THIN FILMS;
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EID: 0032091463
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.37.l630 Document Type: Article |
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Times cited : (47)
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References (11)
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