Reflectivity investigations as a method for characterizing group III nitride films

Journal of Applied Physics

Volumn 86, Issue 5, 1999, Pages 2602-2610

  Shokhovets, S ^a,d   Goldhahn, R ^a   Gobsch, G ^a   Cheng, T S ^b   Foxon, C T ^b   Kipshidze, G D ^c,e   Richter, Wo ^c  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^b UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^c FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

^d BELARUSIAN NATIONAL TECHNICAL UNIVERSITY   (Belarus)

^e IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; INTERFACES (MATERIALS); LIGHT ABSORPTION; NITRIDES; REFRACTIVE INDEX; SEMICONDUCTING GALLIUM ARSENIDE; SPECTRUM ANALYSIS; SUBSTRATES;

GALLIUM NITRIDE; HETEROEPITAXIAL FILMS;

SEMICONDUCTING FILMS;

EID: 0032615020     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.371098     Document Type: Article

References (42)

1. S. Nakamura, M. Senoh, N. Iwasa, and S. Nagahama, Appl. Phys. Lett. 67, 1868 (1995).
2. S. Nakamura et al., Appl. Phys. Lett. 72, 2014 (1998).
3. A. Osinsky et al., Appl. Phys. Lett. 72, 551 (1998).
4. S. Guha and N. A. Bojarczuk, Appl. Phys. Lett. 73, 1487 (1998).
5. J. Pasternak and L. Roskocova, Phys. Status Solidi 14, K5 (1966).
6. E. Ejder, Phys. Status Solidi A 6, 445 (1971).
7. I. Grzegory, J. Jun, M. Bockowski, S. T. Krukowski, M. Wroblewski, B. Lucznik, and S. Porowski, J. Phys. Chem. Solids 56, 639 (1995).
8. P. Perlin, I. Gorczyca, N. E. Christensen, I. Grzegory, H. Teisseyre, and T. Suski, Phys. Rev. B 45, 13307 (1992).
9. A. R. A. Zauner, M. A. C. Devillers, P. R. Hageman, P. K. Larsen, and S. Porowski, MRS Internet J. Nitride Semicond. Res. 3, 17 (1998).
10. Handbook of Optical Constants of Solids, edited by E. D. Palik (Aca-demic, New York, 1985, 1991), Part I and Part II.
11. S. Yoshida, S. Misawa, and S. Gonda, Appl. Phys. Lett. 42, 427 (1983).
12. H. Amano, N. Sawaki, I. Akasaki, and Y. Toyoda, Appl. Phys. Lett. 48, 353 (1986).
13. S. Nakamura, Jpn. J.-Appl. Phys., Part 2 30, L1705 (1991).
14. M. E. Lin, B. Sverdlov, G. L. Zhou, and H. Morkoc, Appl. Phys. Lett 62, 3479 (1993).
15. A. Ohtani, K. S. Stevens, and R. Beresford, Appl. Phys. Lett. 65, 61 (1994).
16. A. Barski, U. Rössner, J. L. Rouviere, and M. Arley, MRS Internet J. Nitride Semicond. Res. 1, 21 (1996).
17. A. Nakadaira and H. Tanaka, Jpn. J. Appl. Phys., Part 1 37, 1449 (1998).
18. U. Köhler, D. J. As, B. Schöttker, T. Frey, K. Lischka, J. Scheiner, S. Shokhovets, and R. Goldhahn, J. Appl. Phys. 85, 404 (1999).
19. Y. Hiroyama and M. Tamura, Jpn. J. Appl. Phys., Part 2 37, L630 (1998).
20. S. Ruvimov, Z. Liliental-Weber, J. Washburn, T. J. Drummond, M. Hafich, and S. R. Lee, Appl. Phys. Lett. 71, 2931 (1997).
21. S. Shokhovets, R. Goldhahn, V. Cimalla, T. S. Cheng, and C. T. Foxon, J. Appl. Phys. 84, 1561 (1998); S. Shokhovets, R. Goldhahn, T. S. Cheng, and C. T. Foxon, Semicond. Sci. Technol. 14, 181 (1999).
22. S. Shokhovets, R. Goldhahn, V. Cimalla, T. S. Cheng, and C. T. Foxon, J. Appl. Phys. 84, 1561 (1998); S. Shokhovets, R. Goldhahn, T. S. Cheng, and C. T. Foxon, Semicond. Sci. Technol. 14, 181 (1999).
23. H. Okumura, K. Ohta, G. Feuillet, K. Batakrishnan, S. Chichibu, H. Hamaguchi, P. Hacke, and S. Yoshida, J. Cryst. Growth 178, 113 (1997).
24. N. V. Edwards, M. D. Bremser, T. W. Weeks, Jr., R. S. Kern, R. F. Davis, and D. E. Aspnes, Appl. Phys. Lett. 69, 2065 (1996); N. V. Edwards et al., Thin Solid Films 313-314, 187 (1998).
25. N. V. Edwards, M. D. Bremser, T. W. Weeks, Jr., R. S. Kern, R. F. Davis, and D. E. Aspnes, Appl. Phys. Lett. 69, 2065 (1996); N. V. Edwards et al., Thin Solid Films 313-314, 187 (1998).
26. T. Kawashima, H. Yoshikawa, S. Adachi, S. Fuke, and K. Ohtsuka, J. Appl. Phys. 82, 3528 (1997).
27. J. Miragliotta, D. K. Wickenden, T. J. Kistenmacher, and W. A. Bryden, J. Opt. Soc. Am. B 10, 1447 (1993).
28. H. Amano, N. Watanabe, N. Koide, and I. Akasaki, Jpn. J. Appl. Phys., Part 2 32, L1000 (1993).
29. M. E. Lin, B. N. Sverdlov, S. Suite, H. Morcoc, and A. E. Drakin, Electron. Lett. 29, 1759 (1993).
30. I. Akasaki and H. Amano, Mater. Res. Soc. Symp. Proc. 339, 443 (1994).
31. X.-C. Long, R. A. Myers, S. R. Brueck, R. Ramer, K. Zheng, and S. D. Hersee, Appl. Phys. Lett. 67, 1349 (1995).
32. H. Yao, C. H. Yan, H. A. Jenkinson, J. M. Zawada, J. S. Speck, and S. P. Denbaars, Mater. Res. Soc. Symp. Proc. 449, 805 (1997).
33. G. Yu, G. Wang, H. Ishikawa, M. Umeno, T. Soga, T. Egawa, J. Watanabe, and T. Jimbo, Appl. Phys. Lett. 70, 3209 (1997).
34. G. Yu, H. Ishikawa, T. Egawa, T. Soga, J. Watanabe, T. Jimbo, and M. Umeno, Jpn. J. Appl. Phys., Part 2 36, L1029 (1997).
35. R. M. A. Azzam and N. M. Bashara, Ellipsometry and Polarized Light (North Holland, Amsterdam, 1989), Chap. 4.
36. O. Ambacher, W. Rieger, P. Ausmann, H. Angerer, T. D. Moustakas, and M. Stutzmann, Solid State Commun. 97, 365 (1996).
37. S. Chichibu, T. Mizutani, T. Shioda, H. Nakanishi, T. Deguchi, T. Azuhata, T. Sola, and S. Nakamura, Appl. Phys. Lett. 70, 3440 (1997).
38. I. Franz and W. Langheinrich, Solid-State Electron. 13, 807 (1970).
39. I. Ohlidal, K. Navratil, and F. Lukes, J. Opt. Soc. Am. 61, 1630 (1971).
40. C. T. Foxon et al., J. Cryst. Growth 150, 892 (1995).
41. D. E. Aspnes, J. B. Theeten, and F. Hottier, in Selected Papers on Ellipsometry, SPIE Milestone Series Vol. MS 27, edited R. M. A. Azzam (SPIE, Washington, 1991), p. 288.
42. H. P. D. Schenk, G. D. Kipshidze, U. Kaiser, A. Fissel, J. Kräußlich, J. Schulze, and Wo. Richter, J. Cryst. Growth (in press).