Quantifying the nature of hot carrier degradation in the spacer region of ldd nmosfets

IEEE Transactions on Device and Materials Reliability

Volumn 1, Issue 3, 2001, Pages 134-143

  Manhas, S K ^a   De Merlyne Souza, M ^a   Oates, Anthony S ^b  

^a DE MONTFORT UNIVERSITY   (United Kingdom)

^b NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0038226728     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/7298.974828     Document Type: Article

References (37)

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