Features and mechanisms of the saturating hot-carrier degradation in LDD NMOSFET's

IEEE Transactions on Electron Devices

Volumn 43, Issue 7, 1996, Pages 1114-1122

  Raychaudhuri, A ^a   Deen, M J ^b,b   Wan, W S K ^a   King, M I H ^b   Kwan, W S ^a  

^a SIMON FRASER UNIVERSITY   (Canada)

^b NORTEL NETWORKS   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DEFECTS; ELECTRIC VARIABLES MEASUREMENT; HOT CARRIERS; MATHEMATICAL MODELS; SUBSTRATES; TRANSCONDUCTANCE;

FLOATING GATE TECHNIQUES; HOT CARRIER DEGRADATION; LINEAR TRANSCONDUCTANCE; SUBSTRATE CURRENT;

MOSFET DEVICES;

EID: 0030191092     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.502423     Document Type: Article

References (28)

1. K.M. Cham, J. Hui, P. V. Voorde. and H. S. Fu, "Self-limiting behavior of hot-carrier degradation and its implication on the validity of lifetime extraction by accelerated stress," in Proc. 25lh Int. Conf. Rcliab. Phys.. 1987, pp. 191-194.
2. Q. Wang, W.H. Krautschneider, M. Brox, and W. Weber, "Time dependence of hot-carrier degradation in LDD nMOSFET's," Microelectronic
3. Kng., vol. 15, pp. 441-444, 1991.
4. C. Liang, H. Oaw, and P. Cheng, "An analytical model for self-limiting behavior of hot-carrier degradation in 0.25- n-MOSFET's," IEEE Electron Device Lett., vol. 13. pp. 569-571, 1992.
5. J.-S. Goo. II. Shin, H. Hwang, D.-G. Rang, and D.-H. Ju, "Physical analysis for saturation behavior of hot-carrier degradation in lightly doped drain -channel metal-oxide-semiconductor field effect transistors," Jpn.J. Appl. Phys., vol. 33, pp. 606-611, 1994.
6. V.-H. Chan and J.E. Chung, "Two-stage hot-carrier degradation and its impact on submicrometer LDD NMOSFET lifetime prediction," IEEE Trans. Electron Devices, vol. 42, pp. 957-962. 1995.
7. Y. Pan, K.K. Ng, and C. C. Wci, "Hot-carrier induced electron mobility and series resistance degradation in LDD NMOSFET's," IEEE Electron Device Leu., vol. 15, pp. 499-501, 1994.
8. E. Takeda and N. Suzuki, "An empirical model for device degradation due to hot-carrier injection," IEEE Electron Device Lett., vol. EDL-4, pp. 111-113, 1983.
9. C. Hu, S.C. Tarn, F.-C. Hsu, P. K. Ko, T. Y. Chan, and K. W. Terrill, "Hot-electron-induced MOSFET degradation-Model, monitor, and improvement,'' IEEE Trans. Electron Devices, vol. ED-32, pp. 375-385, 1985.
10. S. Sun and J. Plummer, "Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces," IEEE Trans. Electron Devices, vol. ED-27, pp. 1497-1508, 1980.
11. A. Raychaudhuri, M.J. Deen, M. I. H. King, and W. S. Kwan, "A simple method to qualify the LDD structure against the early mode of hot-carrier degradation," IEEE Trans. Electron Devices, vol. 43, pp. 110-115, Jan. 1996.
12. J.-C. Marchetaux, M. Bourcerie, A. Boudou, and D. Vuillaume, "Application of the floating-gate technique to the study of the n-MOSFET gate current evolution due to hot-carrier aging," IEEE Electron Device Lett., vol. 11, pp. 406-408, 1990.
13. D. Vuillaume and B.S. Doyle, "Properties of hot carrier induced traps in MOSFET's characterized by the floating-gate technique." Solid State Electronics, vol. 35. pp. 1099-1107, 1992.
14. A. Raychaudhuri.W. S. Kwan, M. J. Deen, I. Calder, and M. King, "TSUPREM4 (6.0) Virtual Factory," Tech. Report to Device Engineering Group, Northern Telecom Limited, Ottawa, Canada, July 1994.
15. "TMA TSUPREM-4 Two-Dimensional Process Simulation Program," Version 6.1, Technology Modeling Associates, Inc., Palo Alto, CA, 1994.
16. "TMA MEDICI Two-Dimensional Device Simulation Program, Version 2.0," Technology Modeling Associates, Inc., Palo Alto, California, 1994.
17. N.D. Arora, J. R. Hauser, and D. J. Roulston, "Electron and hole mobilities in silicon as a function of concentration and temperature," IEEE Trans. Electron Devices, vol. ED-29, pp. 292-295, 1982.
18. A. Forghieri.R. Guerreri, P, Ciampolini, A. Gnudi, M. Rudan, and G. Baccarani, "A new discretization strategy of the semiconductor equations comprising momentum and energy balance," IEEE Trans. Computer-Aided Design, vol. 7, pp. 231- 242, 1988.
19. S. Tarn, P. Ko, and C. Hu, "Lucky-electron model of channel hotelectron injection in MOSFET's,1' IEEE Trans. Electron Devices, vol. ED-31, pp. 1116-1125, 1984.
20. M.J. Deen and A. Raychaudhuri, "Charge pumping, low frequency noise, and floating gate characterization techniques of SiO2 gate insulators in MOSFET's.'' in Proc. 3rd Symp. Silicon Nitride and Silicon Dioxide Thin Insulating Films, V. J. Kapoor and W. D. Brown, Eds., The Electrochemical Society, Inc., Pennington, NJ, 1994, pp. 375-384.
21. A. Raychaudhuri, W.S. Kwan, and M. J. Deen, "Location and quantification of the interface defects in stressed LDD NMOSFET's using a combination of floating-gate and transconductance techniques, and charge pumping methods,' in Proc. 7th Canadian Semicond. Tech. Conf., 1995, p. 94; and "Location and quantification of the interface defects in stressed LDD NMOSFET's using a combination of floating-gate and transconductance techniques, and charge pumping methods," Can. J. Physicists, to be published.
22. A. Raychaudhuri, J. Kolk, J. Deen. and M.I. H. King. "A simple method to extract the asymmetry in parasitic source and drain resistances from measurements on a MOS transistor." IF.F.E Trnns. Electron Devices, vol. 42. pp. 1388-1390, 1995.
23. A. Raychaudhuri, M.J. Deen, M. I. H. King, and J. Kolk, "Finding the asymmetric parasitic source and drain resistances from the A.C. conductances of a single MOS transistor," Solid-Stare Electronics, to be published.
24. _. "A simple method to extract the parasitic resistances from a single MOSFET using measurements of small-signal conductances." in Proc. 25th European Solid-State Device Research Conf. (ESSDERC'95), The Hague, Netherland, Sept. 1995, pp. 25-27.
25. C. IIu. "Hot-carrier effects," in Advanced MOS Device Physics, VLSI Electronics Micromruclure Science, N.G. Einspruch and G. Sh. Gildenblat, Eds. New York: Academic Press. Inc., 1989, vol. IS.
26. K.R. Hofmann. C. Werner, W. Weher, and G. Dorda, "Hot-electron and hole-emission effects in short -channel MOSFET's," IEEE Trans. Electron Devices, vol. ED-32, p. 691, 1985.
27. P. Ileremans, R. Bellens, G. Groesenekcn, A.v. Schwerin, H. E. Maes, M. Brox, and W. Weber, "The mechanisms of hot-carrier degradation," in HOT Carrier Design Considerations for MOS Devices and Circuits, C. T. Wang. Ed. New York: Van Nostrand, 1992.
28. T. Wang, C. Huang, P.C. Chou, S. S. S. Chung, and T. E. Ghana, "Effects of hot carrier induced interface State generation in submicron LDD MOSFET's," IEEE Trans. Electron Devices, vol. 41, pp. 1618-1622, 1994.