Hot-Electron and Hole-Emission Effects in Short n-Channel MOSFET's

IEEE Transactions on Electron Devices

Volumn 32, Issue 3, 1985, Pages 691-699

  Hofmann, Kar R ^a   Werner, Christoph ^b   Weber, Werner ^b   Dorda, Gerhard ^b  

^a SIEMENS CORPORATE RESEARCH   (United States)

^b SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, MOSFET - DEGRADATION;

HOT-CARRIER DEGRADATION; HOT-ELECTRON AND HOLE-EMISSION EFFECTS; SHORT N-CHANNEL MOSFET'S.;

ELECTRONS;

EID: 0022028660     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1985.22000     Document Type: Article

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