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Volumn 32, Issue 2, 1985, Pages 375-385

Hot-Electron-Induced MOSFET Degradation—Model, Monitor, and Improvement

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EID: 84945713471     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1985.21952     Document Type: Article
Times cited : (1086)

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