SCOPUS 정보 검색 플랫폼

Volumn , Issue , 2000, Pages 108-111

Early stage hot carrier degradation of state-of-the-art LDD N-MOSFETs

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRIC RESISTANCE; HOT CARRIERS;

SERIES RESISTANCE;

MOSFET DEVICES;

EID: 0033743158 PISSN: 00999512 EISSN: None Source Type: Journal
DOI: 10.1109/RELPHY.2000.843899 Document Type: Article

Times cited : (10)

References (9)

1
- 0029309639
- Two-stage hot carrier degradation and its impact on submicrometer LDD NMOSFET lifetime prediction
- V. H. Chan J. E. Chung Two-stage hot carrier degradation and its impact on submicrometer LDD NMOSFET lifetime prediction IEEE Trans. Electron Devices 42 957 962 1995
- (1995) IEEE Trans. Electron Devices , vol.42 , pp. 957-962
- Chan, V.H.¹ Chung, J.E.²

2
- 0030191092
- Features and mechanisms of the saturating hot-carrier degradation in LDD NMOSFET's
- A. Raychaudhuri M. J. Deen W. S. Kwan M. I. H. King Features and mechanisms of the saturating hot-carrier degradation in LDD NMOSFET's IEEE Trans. Electron Devices 43 1114 1122 1996
- (1996) IEEE Trans. Electron Devices , vol.43 , pp. 1114-1122
- Raychaudhuri, A.¹ Deen, M.J.² Kwan, W.S.³ King, M.I.H.⁴

3
- 0031673760
- A unified model for the self-li miting hot-carrier degradation in LDD n-MOSFET's
- D. S. Ang C. H. Ling A unified model for the self-li miting hot-carrier degradation in LDD n-MOSFET's IEEE Trans. Electron Devices 45 149 159 1998
- (1998) IEEE Trans. Electron Devices , vol.45 , pp. 149-159
- Ang, D.S.¹ Ling, C.H.²

4
- 0028756531
- Hot-carrier induced electron mobility and series resistance degradation in LDD NMOSFET's
- Y. Pan K. K. Ng C. C. Wei Hot-carrier induced electron mobility and series resistance degradation in LDD NMOSFET's IEEE Electron Device Lett. 15 499 501 1994
- (1994) IEEE Electron Device Lett. , vol.15 , pp. 499-501
- Pan, Y.¹ Ng, K.K.² Wei, C.C.³

5
- 0020003558
- Measurement of MOSFET constants
- F. H. De La Moneda H. N. Kotecha M. Shatzkes Measurement of MOSFET constants IEEE Electron Device Lett. EDL-3 10 12 1982
- (1982) IEEE Electron Device Lett. , vol.EDL-3 , pp. 10-12
- De La Moneda, F.H.¹ Kotecha, H.N.² Shatzkes, M.³

6
- 0032084109
- Precise quantitative evaluation of the hot-carrier induced drain scries resistance degradation in LATID-n-MOSFETs
- G. H. Walter W. Weber R. Brederlow R. Jurk C. H. Linnenbank C. Schlunder D. S. Landsiedel R. Thewes Precise quantitative evaluation of the hot-carrier induced drain scries resistance degradation in LATID-n-MOSFETs Microelectron., Reliability 38 1063 1068 1998
- (1998) Microelectron., Reliability , vol.38 , pp. 1063-1068
- Walter, G.H.¹ Weber, W.² Brederlow, R.³ Jurk, R.⁴ Linnenbank, C.H.⁵ Schlunder, C.⁶ Landsiedel, D.S.⁷ Thewes, R.⁸

7
- 0025404777
- Interface State Creation and Charge Trapping in the Medium to High Gate Voltage Range (Vd/2 ≥ Vg ≥ Vd) During Hot-Carrier Stressing of n-MOS Transistors
- B. Doyle M. Bourcerie J.-C. Marchetaux A. Boudou Interface State Creation and Charge Trapping in the Medium to High Gate Voltage Range (Vd/2 ≥ Vg ≥ Vd) During Hot-Carrier Stressing of n-MOS Transistors IEEE Trans. Electron Devices 37 744 754 1990
- (1990) IEEE Trans. Electron Devices , vol.37 , pp. 744-754
- Doyle, B.¹ Bourcerie, M.² Marchetaux, J.-C.³ Boudou, A.⁴

8
- 0029345912
- A study of hot carrier degradation in NMOSFET's by gate capacitance and charge pumping current
- C. H. Ling S. E. Tan D. S. Ang A study of hot carrier degradation in NMOSFET's by gate capacitance and charge pumping current IEEE Trans. Electron Devices 42 1321 1328 1995
- (1995) IEEE Trans. Electron Devices , vol.42 , pp. 1321-1328
- Ling, C.H.¹ Tan, S.E.² Ang, D.S.³

9
- 0026838062
- Simulating hot-carrier effects on circuit performance
- C. Hu Simulating hot-carrier effects on circuit performance Semicond. Sci. Technology 7 B555 B558 1992
- (1992) Semicond. Sci. Technology , vol.7 , pp. B555-B558
- Hu, C.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.