A physically-based semi-empirical series resistance model for deep-submicron MOSFET I-V modeling

IEEE Transactions on Electron Devices

Volumn 47, Issue 6, 2000, Pages 1300-1302

  Lim, K Y ^a   Zhou, X ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Compact v modeling; Deep submicron mosfet; LDD; Series resistance

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC CONDUCTANCE; ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; MATHEMATICAL MODELS; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

BIAS DEPENDENT COMPONENT; BIAS INDEPENDENT COMPONENT; DEEP SUBMICRON MOSFET; DRAIN CURRENT CONDUCTANCE METHOD;

MOSFET DEVICES;

EID: 0033730905     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.842978     Document Type: Article

References (16)

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