Extraction of metal-oxide-semiconductor field-effect-transistor interface state and trapped charge spatial distributions using a physics-based algorithm

Journal of Applied Physics

Volumn 81, Issue 4, 1997, Pages 1992-2001

  Chim, W K ^a   Leang, S E ^a   Chan, D S H ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; CAPACITANCE; CARRIER CONCENTRATION; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON ENERGY LEVELS; HOT CARRIERS; INTERFACES (MATERIALS); OXIDES;

CARRIER INJECTION; CHARGE EXTRACTION ALGORITHMS; CHARGE PUMPING; HOT CARRIER STRESS; TRAPPED CHARGES;

MOSFET DEVICES;

EID: 0031077848     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.364055     Document Type: Article

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