Experimental determination of electron and hole mobilities in MOS accumulation layers

IEEE Electron Device Letters

Volumn 18, Issue 5, 1997, Pages 200-202

  McKeon, J B ^a   Chindalore, G ^a   Hareland, S A ^a   Shih, W K ^a   Wang, C ^a   Tasch Jr , A F ^a   Maziar, C M ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; IMPURITIES; SEMICONDUCTOR DOPING;

ACCUMULATION LAYERS; ELECTRON MOBILITIES; HOLE MOBILITIES;

MOSFET DEVICES;

EID: 0031140948     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.568762     Document Type: Article

References (12)

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