The Generation and Characterization of Electron and Hole Traps Created by Hole Injection During Low Gate Voltage Hot-Carrier Stressing of n-MOS Transistors

IEEE Transactions on Electron Devices

Volumn 37, Issue 8, 1990, Pages 1869-1876

  Doyle, Brian S ^a   Bourcerie, Marc ^a   Bergonzoni, Carlo ^c   Benecchi, Roberto ^c,d   Bravis, A ^a   Mistry, Kaizad R ^b   Boudou, Alain ^a  

^a BULL SAS   (France)

^b HEWLETT PACKARD COMPANY   (United States)

^c STMICROELECTRONICS   (Italy)

^d Istituto de Fisica del Politecnico ^*  (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS; SEMICONDUCTOR DEVICES, MOS - JUNCTIONS; SEMICONDUCTOR MATERIALS - CHARGE CARRIERS;

ELECTRON/HOLE TRAPS; HOLE INJECTION; HOT CARRIER STRESSING; LIFETIME PREDICTION; MAXIMUM INTERFACE STATE; N-MOS TRANSISTORS;

TRANSISTORS;

EID: 0025474204     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.57138     Document Type: Article

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