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Volumn 41, Issue 2, 2001, Pages 169-177

Comparison of early stage hot carrier degradation behaviour in 5 and 3 V sub-micron low doped drain metal oxide semiconductor field effect transistors

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; DEGRADATION; ELECTRIC RESISTANCE; HOT CARRIERS; SEMICONDUCTOR DOPING; TRANSCONDUCTANCE;

EID: 0035124430     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(00)00210-9     Document Type: Article
Times cited : (5)

References (24)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.