Comparison of early stage hot carrier degradation behaviour in 5 and 3 V sub-micron low doped drain metal oxide semiconductor field effect transistors

Microelectronics Reliability

Volumn 41, Issue 2, 2001, Pages 169-177

  De Souza, M M ^a   Wang, J ^a   Manhas, S ^a   Sankara Narayanan, E M ^a   Oates, A S ^b  

^a DE MONTFORT UNIVERSITY   (United Kingdom)

^b NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; DEGRADATION; ELECTRIC RESISTANCE; HOT CARRIERS; SEMICONDUCTOR DOPING; TRANSCONDUCTANCE;

LOW DOPED DRAIN METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS;

MOSFET DEVICES;

EID: 0035124430     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(00)00210-9     Document Type: Article

References (24)

1. Izawa R., Kure T., Takeda E. IEEE Trans Electron Dev. ED-35:1998;2088.
2. Hori T., Hirase J., Odake Y., Yasui T. IEEE Trans Electron Dev. ED-39:1992;2312.
3. Mieville JP, Van Den Bosch G, Deferm L, Bellens R, Groeseneken G, Maes HE, Schoenmaker W. Proceedings of IEEE IEDM Tech Dig 1994. p. 83-6.
4. Yoshitomie T, Saito M, Ohguro T, Ono M, Momose HS, Iwai H. Symposium on VLSI tech., Kyoto, 1995. p. 11.
5. Hu C., Tam S.C., Hsu F.C., Ko P.K., Chan T.Y., Terrill K.W. IEEE Trans Electron Dev. ED-32:1985;375.
6. Doyle B., Bourcerie M., Marchetaux J.C., Boudou A. IEEE Trans Electron Dev. 37:1990;744.
7. Manhas SK, De Souza MM, Oates AS, Chetlur SC, Narayanan EMS. Proceedings of IEEE, IRPS 2000. p. 108.
8. Cham KM, Hui J, Vande Voorde P, Fu HS. Proceedings of IEEE, IRPS 1987. p. 191.
9. Chan V-H, Chung JE. Proceedings of IEEE IEDM Tech Dig 1993. p. 515.
10. Liang C., Gaw H., Cheng P. IEEE-Electron Dev Lett. 13:1992;569.
11. Raychaudhuri A., Deen M.J., Kwan W.S., King M.I.H. IEEE Trans Electron Dev. 43:1996;1114.
12. Sun J.Y.C., Woderman M.R., Lauz S.E. IEEE Trans Electron Dev. ED-33:1986;1556.
13. Terada K., Muta H. Jpn J Appl Phys. 18:1979;953.
14. Chern J.G.J., Chang P., Motta R.F., Godinho N. IEEE Electron Dev Lett. EDL-1:1980;170.
15. Taur Y., Zicherman D.S., Lombardi D.R., Restle P.J., Hsu C.H., Hanafi H.I., Woderman M.R., Davari B., Shahidi G.G. IEEE Electron Dev Lett. 13:1986;267.
16. Suciu P.I., Johnston R.L. IEEE Trans Electron Dev. ED-27:1980;1846.
17. De La Moneda F.H., Kotecha H.N., Shatzkes M. IEEE Electron Dev Lett. EDL-3:1982;10.
18. Sheu B.J., Hu C., Ko P.K., Hsu F.C. IEEE Electron Dev Lett. EDL-5:1984;365.
19. Hu G.J., Chang C., Chia Y.T. IEEE Trans Electron Dev. 34:1987;2469.
20. Taur Y. IEEE Trans Electron Dev. 47:2000;160.
21. Walter G.H., Weber W., Brederlow R., Jurk R., Linnenbank C.H., Schlunder C., Landsiedel D.S., Thewes R. Microelectron Reliab. 38:1998;1063.
22. Pan Y, Ng K.K., Wei C.C. IEEE Trans Electron Lett. 15:1994;1317.
23. Lou C., Chim W.-.K., Chan D.S.-.H., Pan Y. IEEE Trans Electron Dev. 45:1998;1317.
24. Raychaudhuri A, Deen MJ, Kwan WS, King MIH. IEEE Trans Electron Dev 1996;43:110.