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Volumn 41, Issue 2, 2001, Pages 169-177
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Comparison of early stage hot carrier degradation behaviour in 5 and 3 V sub-micron low doped drain metal oxide semiconductor field effect transistors
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Author keywords
[No Author keywords available]
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Indexed keywords
CARRIER MOBILITY;
DEGRADATION;
ELECTRIC RESISTANCE;
HOT CARRIERS;
SEMICONDUCTOR DOPING;
TRANSCONDUCTANCE;
LOW DOPED DRAIN METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS;
MOSFET DEVICES;
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EID: 0035124430
PISSN: 00262714
EISSN: None
Source Type: Journal
DOI: 10.1016/S0026-2714(00)00210-9 Document Type: Article |
Times cited : (5)
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References (24)
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