A unified model for the self-limiting hot-carrier degradation in LDD n-MOSFET's

IEEE Transactions on Electron Devices

Volumn 45, Issue 1, 1998, Pages 149-159

  Ang, D S ^a   Ling, C H ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; HOT CARRIERS; INTERFACES (MATERIALS); SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING;

CHARGE PUMPING; LIGHTLY DOPED DRAIN (LDD) SEMICONDUCTOR DEVICES;

MOSFET DEVICES;

EID: 0031673760     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.658824     Document Type: Article

References (34)

1. E. Takedaand N. Suzuki, "An empirical model for device degradation due to hot-carrier injection," IEEE Electron Device Lett. , vol. EDL-4, p. 111, 1983.
2. C. Hu,S. C. Tam, F. -C. Hsu, P. -K. Ko, T. -Y. Chan, and K. W. Terrill, "Hot-electron-induced MOSFET degradation-model, monitor, and improvement," IEEE Trans. Electron Devices, vol. ED-32, p. 375, 1985.
3. J. E. Chung, P. -K. Ko, and C. Hu, "A model for hot-electron-induced MOSFET linear-current degradation based on mobility reduction due to interface-state generation," IEEE Trans. Electron Devices, vol. 38, p. 1362, 1991.
4. F. -C. Hsuand H. R. Grinolds, "Structure-enhanced MOSFET degradation due to hot-electron injection," IEEE Electron Device Lett. , vol. EDL-5, p. 71, 1984.
5. F. -C. Hsuand K. -Y. Chiu, "Evaluation of LDD MOSFET's based on hot-electron-induced degradation," IEEE Electron Device Lett. , vol. EDL-5, p. 162, 1984.
6. K. Cham,J. Hui, P. V. Voorde, and H. Fu, "Self-limiting behavior of hot-carrier degradation and its implication on the validity of lifetime extraction by accelerated stress," in Proc. Int. Reliability Physics Symp. , p. 191, 1987.
7. S. W. Sun, M. Orlowski, and K. -Y. Fu, "Parameter correlation and modeling of the power-law relationship in MOSFET hot-carrier degradation," IEEE Electron Device Lett. , vol. 11, p. 297, 1990.
8. C. Liang,H. Gaw, and P. Cheng, "An analytical model for self-limiting behavior of hot-carrier degradation in 0. 25-μm n-MOSFET's," IEEE Electron Device Lett. , vol. 13, p. 569, 1992.
9. Q. Wang,W. H. Krautschneider, M. Brox, and W. Weber, "Time dependence of hot-carrier degradation in LDD nMOSFET's," in Proc. Insulating Films on Semiconductors, p. 441, 1991.
10. V. -H. Chanand J. E. Chung, "Two-stage hot-carrier degradation and its impact on submicrometer LDD NMOSFET lifetime prediction," IEEE Trans. Electron Devices, vol. 42, p. 957, 1995.
11. A. Raychaudhuri,M. J. Deen, W. S. Kwan, and M. I. H. King, "Features and mechanisms of the saturating hot-carrier degradation in LDD NMOSFET's," IEEE Trans. Electron Devices, vol. 43, p. 1114, 1996.
12. G. Groeseneken,H. E. Maes, N. Beitran, and R. F. de Keersmaecker, "A reliable approach to charge pumping measurement in MOS transistors," IEEE Trans. Electron Devices, vol. ED-31, p. 42, 1984.
13. W. Chen,A. Balasinski, and T. P. Ma, "Eateral profiling of oxide charge and interface traps near MOSFET junctions," IEEE Trans. Electron Devices, vol. 40, p. 187, 1993.
14. M. Tsuchiaki,H. Hara, T. Morimoto, and H. Iwai, "A new charge pumping method for determining the spatial distribution of hot-carrier-induced fixed charge in p-MOSFET's," IEEE Trans. Electron Devices, vol. 40, p. 1768, 1993.
15. "TMA MEDICITwo-Dimensional Device Simulation Program, Version 2. 0," Technology Modeling Associates, Inc. , Palo Alto, CA, 1994.
16. "TMA TSUPREM-4Two-Dimensional Process Simulation Program, Version 6. 1," Technology Modeling Associates, Inc. , Palo Alto, CA, 1994.
17. P. Heremans,R. Bellens, G. Groeseneken, and H. E. Maes, "Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFET's," IEEE Trans. Electron Devices, vol. 35, p. 2194, 1988.
18. C. H. Ling, Y. T. Yeow, and L. K. Ah, "Characterization of charge trapping in submicrometer NMOSFET's by gate capacitance measurement," IEEE Electron Device Lett. , vol. 13, p. 587, 1992.
19. C. H. Ling, S. E. Tan, and D. S. Ang, "A study of hot-carrier degradation in NMOSFET's by gate capacitance and charge pumping current," IEEE Trans. Electron Devices, vol. 42, p. 1321, 1995.
20. S. E. Hsu, L. M. Liu, M. S. Lin, and C. Y. Chang, "Direct evidence of gate oxide thickness increase in tungsten polycide processes," IEEE Electron Device Lett. , vol. 12, p. 623, 1991.
21. C. H. Ling, L. K. Ah, W. K. Choi, S. E. Tan, and D. S. Ang, "Hot-electron degradation in NMOSFET's: Results from temperature anneal," IEEE Trans. Electron Devices, vol. 41, p. 1303, 1994.
22. S. Okhonin,T. Hessler, and M. Dutoit, "Kinetics of hot-carrier degradation of submicron n-channel LDD MOSFET's," in Proc. ESSDERC, p. 855, 1996.
23. A. Forghieri,R. Guerreri, P. Ciampolini, A. Gnudi, M. Rudan, and G. Baccarani, "A new discretization strategy of the semiconductor equations comprising momentum and energy balance," IEEE Trans. Computer-Aided Design, vol. 7, p. 231, 1988.
24. E. H. Nicollian and J. R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology. Singapore: Wiley, 1991.
25. S. K. Lai, "Interface trap generation in silicon dioxide when electrons are captured by trapped holes," J. Appl. Phys. , vol. 54, p. 2540, 1983.
26. W. Shockley,"Problems related to p-n junction in silicon," Solid-State Electron. , vol. 2, p. 35, 1961.
27. S. Tam,P. K. Ko, and C. Hu, "Eucky-electron model of channel hot-electron injection in MOSFET's," IEEE Trans. Electron Devices, vol. 31, p. 1116, 1984.
28. E. Takeda,A. Shimizu, and T. Hagiwara, "Role of hot-hole injection in hot-carrier effects and the small degraded channel region in MOSFET's," IEEE Electron Device Lett. , vol. EDE-4, p. 329, 1983.
29. Y. A. ElMansy and A. R. Boothroyd, "A simple two-dimensional model for IGFET operation in the saturation region," IEEE Trans. Electron Devices, vol. ED-24, p. 254, 1977.
30. P. Ko,R. S. Muller, and C. Hu, "A unified model for hot-electron currents in MOSFET's," in IEDM Tech. Dig. , p. 600, 1981.
31. Q. Wang,M. Brox, W. H. Krautschneider, and W. Weber, "Explanation and model for the logarithmic time dependence of p-MOSFET degradation," IEEE Electron Device Lett. , vol. 12, p. 218, 1991.
32. A. Bravaixand D. Vuillaume, "Lifetime prediction methods for pMOSFET's: A comparative study of standard and charge-pumping lifetime criteria," IEEE Trans. Electron Devices, vol. 42, p. 101, 1995.
33. B. S. Doyle, K. R. Mistry, and D. B. Jackson, "Examination of gradual-junction p-MOS structures for hot carrier control using a new lifetime extraction method," IEEE Trans. Electron Devices, vol. 39, p. 2290, 1992.
34. J. -S. Goo,H. Shin, H. Hwang, D. -G. Kang, and D. -H. Ju, "Physical analysis for saturation behavior of hot-carrier degradation in lightly doped drain n-channel metal-oxide-semiconductor field effect transistors," Jpn. J. Appl. Phys. , vol. 33, p. 606, 1994.