An efficient method for characterizing time-evolutional interface state and its correlation with the device degradation in LDD n-MOSFET's

IEEE Transactions on Electron Devices

Volumn 43, Issue 6, 1996, Pages 898-903

  Lee, Robert Giahn Horng ^a   Wu, Jiunn Pey ^a   Chung, Steve S ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CORRELATION THEORY; ELECTRIC CURRENTS; ELECTRONS; HOT CARRIERS; MATHEMATICAL MODELS; SEMICONDUCTOR DEVICE TESTING;

CHARGE PUMPING MEASUREMENT; DEVICE DRAIN CURRENT DISTRIBUTION; DRAIN CURRENT; ELECTRONIC CHARGE; THRESHOLD VOLTAGE;

MOSFET DEVICES;

EID: 0030167812     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.502121     Document Type: Article

References (15)

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