Physical analysis for saturation behavior of hot-carrier degradation in lightly doped drain N-channel metal-oxide-semiconductor field effect transistors

Japanese Journal of Applied Physics

Volumn 33, Issue 1, 1994, Pages 606-611

  Goo, Jung Suk ^a   Shin, Hyungsoon ^a   Hwang, Hyunsang ^a   Kang, Dae Gwan ^a   Ju, Dong Hyuk ^a  

^a LG Electronics Inc   (South Korea)

Author keywords

Hot carrier; LDD; Lifetime prediction; Mobility degradation; MOSFET

Indexed keywords

DEGRADATION; ELECTRIC FIELD EFFECTS; HOT CARRIERS; INTERFACES (MATERIALS); SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; SERVICE LIFE; STRESSES;

LIGHTLY DOPED DRAIN MOSFETS (LDDNMOSFETS); MOBILITY DEGRADATION;

MOSFET DEVICES;

EID: 0028257774     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.33.606     Document Type: Article

References (9)

1. T. H. Ning, P. W. Cook, R. H. Denard, C. M. Osburn, S. E. Schuster and H. N. Yu: IEEE Trans. Electron Devices 26 (1979) 346.
2. H. Matsumoto, K. Sawada, S. Asai, M. Hirayama and K. Nagasa- wa: IEEE Trans. Electron Devices 28 (1981) 923.
3. E. Takeda and N. Suzuki: Electron Device Lett. 4 (1983) 111.
4. C. Hu, S. C. Tam, F. C. Hsu, P. K. Ko, T. Y. Chan and K. W. Terrill: IEEE Trans. Electron Devices 32 (1985) 375.
5. K. M. Cham, J. Hui, P. V. Voorde and H. S. Fu: Proc. 25th Int. Conf. Reliability Physics, 1987 (IEEE Electron Devices Soc. and Reliability Soc., San Diego, 1987) p. 191.
6. C. Liang, H. Gaw and P. Cheng: Electron Device Lett. 13 (1992) 569.
7. J. E. Chung, P. K. Ko and C. Hu: IEEE Trans. Electron Devices 38 (1991) 1362.
8. B. S. Doyle, K. R. Mistry and D. B. Jackson: IEEE Trans. Electron Devices 39 (1992) 2290.
9. S. Sun and J. Plummer: IEEE Trans. Electron Devices 27 (1980) 1497.