A novel single-device DC method for extraction of the effective mobility and source-drain resistances of fresh and hot-carrier degraded drain-engineered MOSFET's

IEEE Transactions on Electron Devices

Volumn 45, Issue 6, 1998, Pages 1317-1323

  Lou, Choon Leong ^a   Chim, Wai Kin ^b   Chan, Daniel Siu Hung ^c   Pan, Yang ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b Hewlett Packard Singapore (Private) Limited   (Singapore)

^c CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

Hot carrier; Mobility; Mos transistor; MOSFET; Parameter extraction; Reliability; Series resistance

Indexed keywords

ELECTRIC RESISTANCE; HOT CARRIERS; SEMICONDUCTOR JUNCTIONS;

DRAIN CURRENT CONDUCTANCE METHOD (DCCM);

MOSFET DEVICES;

EID: 0032094851     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.678559     Document Type: Article

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