Time dependence of hot-carrier degradation in LDD nMOSFETs

Microelectronic Engineering

Volumn 15, Issue 1-4, 1991, Pages 441-444

  Wang, Q ^a   Krautschneider, W H ^b   Brox, M ^a   Weber, W ^a  

^a SIEMENS AG   (Germany)

^b SIEMENS CORPORATE RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR MATERIALS - HOT CARRIERS;

HIGH INJECTION CURRENT; HOT CARRIER DEGRADATION; LDD NMOSFETS; MOSFET I/V CHARACTERISTICS;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0026238590     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/0167-9317(91)90260-K     Document Type: Article

References (5)

1. Design tradeoffs between surface and buried-channel FET's