Hot-Hole-Induced Negative Oxide Charges in n-MOSFET's

IEEE Transactions on Electron Devices

Volumn 42, Issue 8, 1995, Pages 1473-1480

  Weber, Werner ^a   Brox, Martin ^a   Thewes, Roland ^b   Saks, Nelson S ^c  

^a SIEMENS AG   (Germany)

^b NAVAL RESEARCH LABORATORY   (United States)

^c Siemens Components Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRONS; FERMI LEVEL; GATES (TRANSISTOR); HOT CARRIERS; INTERFACES (MATERIALS); KINETIC THEORY; SEMICONDUCTOR JUNCTIONS; VOLTAGE MEASUREMENT;

CHARGE PUMPING CURRENT; DETRAPPING KINETICS; GATE VOLTAGE CONDITIONS; HOT HOLE INDUCED NEGATIVE OXIDE CHARGES; INTERFACE STATES;

MOSFET DEVICES;

EID: 0029358575     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.398662     Document Type: Article

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