Two-Stage Hot-Carrier Degradation and Its Impact on Submicrometer LDD NMOSFET Lifetime Prediction

IEEE Transactions on Electron Devices

Volumn 42, Issue 5, 1995, Pages 957-962

  Chan, Vei Han ^a   Chung, James E ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; FORECASTING; GATES (TRANSISTOR); HOT CARRIERS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SERVICE LIFE; TRANSPORT PROPERTIES; VOLTAGE MEASUREMENT;

CARRIER MOBILITY; CHARGE PUMPING CURRENT; DEGRADATION RATE COEFFICIENT; EXTRAPOLATION; HOT CARRIER DEGRADATION; LIGHTLY DOPED DRAIN STRUCTURES; SERIES RESISTANCE; SUBMICROMETER LIFETIME PREDICTION;

MOSFET DEVICES;

EID: 0029309639     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.381994     Document Type: Article

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