An analytical drain current model for submicrometer and deep submicrometer MOSFET's

IEEE Transactions on Electron Devices

Volumn 44, Issue 11, 1997, Pages 1896-1902

  Jang, Sheng Lyang ^a   Hu, Man Chun ^a  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS;

ANALYTICAL DRAIN CURRENT MODEL; DEEP SUBMICROMETER METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS; ENERGY BALANCE EQUATION; TWO DIMENSIONAL POISSON EQUATION;

MOSFET DEVICES;

EID: 0031276909     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.641358     Document Type: Article

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