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Volumn 32, Issue 5, 1985, Pages 896-902

Lightly Doped Drain Transistors for Advanced VLSI Circuits

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICE MANUFACTURE; TRANSISTORS - PERFORMANCE;

EID: 0022059445     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1985.22045     Document Type: Article
Times cited : (14)

References (16)
  • 1
    • 0020767087 scopus 로고
    • New hot carrier injection and device degradation in submicron MOSFET’s
    • E. Takeda, Y. Nagome, H. Kume, and S. Asai, “New hot carrier injection and device degradation in submicron MOSFET’s,” IEE Proc., vol. 130, p. 144, 1983.
    • (1983) IEE Proc , vol.130 , pp. 144
    • Takeda, E.1    Nagome, Y.2    Kume, H.3    Asai, S.4
  • 3
    • 26744471267 scopus 로고
    • VLSI dynamic nMOS design constraints due to induced primary and secondary impact ionization
    • P. K. Chatterjee, “VLSI dynamic nMOS design constraints due to induced primary and secondary impact ionization,” in IEDM Tech. Dig., 1979.
    • (1979) IEDM Tech. Dig
    • Chatterjee, P.K.1
  • 5
    • 0020815021 scopus 로고
    • Role of hot-hole injection in hot carrier effects in MOSFET’s
    • E. Takeda, A. Shimizu, and T. Hagiwara, “Role of hot-hole injection in hot carrier effects in MOSFET’s,” IEEE Electron Device Lett., vol. EDL-4, p. 329, 1983.
    • (1983) IEEE Electron Device Lett , vol.EDL-4 , pp. 329
    • Takeda, E.1    Shimizu, A.2    Hagiwara, T.3
  • 7
    • 0020112866 scopus 로고
    • Fabrication of high performance LDD MOSFET's with oxide-sidewall spacer technology
    • P. Tsang, S. Ogura, W. Walker, J. F. Shepard, and D. Critchlow, “Fabrication of high performance LDD MOSFET's with oxide-sidewall spacer technology,” IEEE Trans. Electron Devices, vol. ED-29, p. 590, 1982.
    • (1982) IEEE Trans. Electron Devices , vol.ED-29 , pp. 590
    • Tsang, P.1    Ogura, S.2    Walker, W.3    Shepard, J.F.4    Critchlow, D.5
  • 11
    • 0021401123 scopus 로고
    • Structure-enhanced MOSFET degradation due to hot electron injection
    • F. C. Hsu and H. R. Grinolds, “Structure-enhanced MOSFET degradation due to hot electron injection,” IEEE Electron Device Lett., vol. EDL-5, p. 71, 1984.
    • (1984) IEEE Electron Device Lett , vol.EDL-5 , pp. 71
    • Hsu, F.C.1    Grinolds, H.R.2
  • 12
    • 0021427595 scopus 로고
    • Temperature dependence of hot electron degradation in MOSFET’s
    • F. C. Hsu and K. Y. Chiu, “Temperature dependence of hot electron degradation in MOSFET’s,” IEEE Electron Device Lett., vol. EDL-5, p. 148, 1984.
    • (1984) IEEE Electron Device Lett , vol.EDL-5 , pp. 148
    • Hsu, F.C.1    Chiu, K.Y.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.