Device parameters extracted in the linear region of MOSFET by comparing with the exact gradual channel model

Solid-State Electronics

Volumn 44, Issue 6, 2000, Pages 969-976

  Katto, Hisao ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; PARAMETER ESTIMATION; SEMICONDUCTOR DEVICE MODELS;

EXACT GRADUAL CHANNEL MODEL;

MOSFET DEVICES;

EID: 0033737396     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00017-4     Document Type: Article

References (13)

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