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Volumn 33, Issue 10, 1986, Pages 1529-1534

Observation of Hot-Hole Injection in NMOS Transistors Using a Modified Floating-Gate Technique

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Indexed keywords


EID: 0008780580     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1986.22703     Document Type: Article
Times cited : (62)

References (14)
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  • 2
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  • 3
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  • 5
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  • 6
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  • 7
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    • Relationship between hot-electrons/holes and degradation of p- and n-channel MOSFET's
    • Jan.
    • T. Tsuchiya and J. Frey, “Relationship between hot-electrons/holes and degradation of p- and n-channel MOSFET's,” IEEE Electron Device Lett., vol. EDL-6, p. 8, Jan. 1985.
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  • 8
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    • B. Eitan and D. Frohman-Bentchkowsky, “Hot-electron injection into the oxide in n-channel MOS devices,” IEEE Trans. Electron Devices, vol. ED-28, p. 328, Mar. 1981.
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  • 10
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  • 11
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    • San Diego, CA, Dec.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.